Magnetic tunnel junction nanopillars surrounded by resistive Si switches: a logic-in-memory device
نویسندگان
چکیده
1 Fert Beijing Institute, BDBC, Beihang University, Beijing 100191, China 2 School of Electronic and Information Engineering, Beihang University, Beijing 100191, China 3 Centre de Nanosciences et de Nanotechnologies (C2N), University of Paris-Sud, Université Paris-Saclay, Orsay 91405, France 4 Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China 5 University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
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